RN3ZZ [BL Galaxy Electrical]

HIGH EFFICIENCY RECTIFIER; 高效率整流
RN3ZZ
型号: RN3ZZ
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

HIGH EFFICIENCY RECTIFIER
高效率整流

功效
文件: 总2页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
RN3Z(Z)  
BL  
VOLTAGE RANGE: 200 V  
CURRENT: 3.0 A  
HIGH EFFICIENCY RECTIFIER  
FEATURES  
Low cost  
DO - 27  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO--27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.014 ounces,1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
RN3Z  
UNITS  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
200  
140  
200  
VRRM  
VRMS  
VDC  
V
MaximumDC blocking voltage  
Maximumaverage forw ard rectified current  
A
A
3.0  
IF(AV)  
9.5mmlead length,  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
IFSM  
80.0  
0.92  
superimposed on rated load @TJ=125  
Maximuminstantaneous forw ard voltage  
@ 3.0 A  
V
VF  
IR  
Maximumreverse current  
@TA=25  
50.0  
1000.0  
50  
A
at rated DC blocking voltage @TA=100  
Maximumreverse recovery time (Note1)  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
70  
pF  
CJ  
30  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
1.  
BLGALAXY ELECTRICAL  
Document Number 0262013  
RATINGS AND CHARACTERISTIC CURVES  
RN3Z(Z)  
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
trr  
50  
10  
N 1.  
N 1.  
+0.5A  
D.U.T.  
0
(+)  
PULSE  
25VDC  
(approx)  
(-)  
GENERATOR  
(NOTE2)  
-0.25A  
OSCILLOSCOPE  
(NOTE1)  
1
NONIN-  
DUCTIVE  
-1.0A  
1cm  
SET TIMEBASEFOR 10/20 ns/cm  
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.  
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50  
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC  
FIG.3 --FORWARD DERATING CURVE  
3.0  
100  
TJ=25  
Pulse Width=300µS  
2.0  
Single Phase  
Half Wave 60Hz  
Resistive or  
10  
Inductive Load  
1.0  
0
1
0
25  
50  
75  
100  
125  
0.1  
0
0.2 0.4 0.6 0.8  
1 1.2 1.4 1.6 1.8 2  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
AMBIENT TEMPERATURE,  
FIG.4 --TYPICAL JUNCTION CAPACITANCE  
FIG.5--PEAK FORWARD SURGE CURRENT  
200  
80  
70  
TJ=125  
8.3ms Single Half  
Sine-Wave  
60  
50  
40  
100  
70  
30  
20  
TJ=25  
f=1MHz  
20  
10  
0
10  
.1 .2  
.4  
1.0  
2
4
10 20 40  
100  
1
2
4
8
10  
20  
40 60 80 100  
REVERSE VOLTAGE,VOLTS  
NUMBER OF CYCLES AT 60Hz  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
2.  
Document Number 0262013  

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